BSS159NH6906XTSA1

Specifications

Vgs Max

±20V

Fet Type

N-Channel

Configuration

SINGLE WITH BUILT-IN DIODE

Kılıf / Paket

TO-236-3, SC-59, SOT-23-3

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Çalışma Sıcaklığı

-55°C~150°C TJ

Transistor Element Material

SILICON

RoHS Durumu

ROHS3 Compliant

Ambalaj

Tape & Reel (TR)

Power Dissipation Max

360mW Ta

Vgsth Max Id

2.4V @ 26μA

HTS Kodu

8541.21.00.95

Rise Time

2.9ns

Feedback Capmax Crss

5.9 pF

Terminal Sayısı

3

Yayın Yılı

2006

Fet Feature

Depletion Mode

ECCN Kodu

EAR99

Fabrika Tedarik Süresi

10 Weeks

Ds Breakdown Voltagemin

60V

Input Capacitance Ciss Max Vds

44pF @ 25V

Terminal Pozisyonu

DUAL

Montaj Tipi

Surface Mount

Seri

SIPMOS®

Parça Durumu

Not For New Designs

Number Of Elements

1

Pin Sayısı

3

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Current Continuous Drain Id25

230mA Ta

Continuous Drain Current Id

230mA

Montaj

Surface Mount

Gate To Source Voltage Vgs

20V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drive Voltage Max Rds On Min Rds On

0V 10V

Gate Charge Qg Max Vgs

2.9nC @ 5V

Terminal Formu

GULL WING

Drain To Source Voltage Vdss

60V

Rds On Max Id Vgs

3.5 Ω @ 160mA, 10V