Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Genişlik
- 1.25mm
- Terminal Pozisyonu
- DUAL
- Input Capacitance Ciss Max Vds
- 43pF @ 25V
- Yükseklik
- 1mm
- Seri
- SIPMOS®
- Operating Mode
- ENHANCEMENT MODE
- Number Of Elements
- 1
- Continuous Drain Current Id
- 280mA
- Current Continuous Drain Id25
- 280mA Ta
- Drive Voltage Max Rds On Min Rds On
- 4.5V 10V
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Fet Type
- N-Channel
- Transistor Element Material
- SILICON
- Ambalaj
- Cut Tape (CT)
- Akım
- 2A
- Vgsth Max Id
- 1.4V @ 26μA
- Uzunluk
- 2mm
- Element Configuration
- Single
- Contact Plating
- Tin
- Yayın Yılı
- 2002
- JESD-609 Kodu
- e3
- Fabrika Tedarik Süresi
- 10 Weeks
- Montaj Tipi
- Surface Mount
- Radyasyon Dayanımı
- No
- Fall Time Typ
- 8.2 ns
- Parça Durumu
- Active
- Turn Off Delay Time
- 6.7 ns
- Drain To Source Breakdown Voltage
- 60V
- Pin Sayısı
- 3
- Montaj
- Surface Mount
- Weight
- 124.596154mg
- Gate Charge Qg Max Vgs
- 1.5nC @ 10V
- Gate To Source Voltage Vgs
- 20V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Rds On Max Id Vgs
- 3.5 Ω @ 200mA, 10V
- Number Of Channels
- 1
- Turn On Delay Time
- 2.2 ns
- Terminal Formu
- GULL WING
- Max Dual Supply Voltage
- 60V
- Kılıf / Paket
- SC-70, SOT-323
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