BSS138N-E6327

Specifications

Ds Breakdown Voltagemin

60V

JESD-609 Kodu

e3

ECCN Kodu

EAR99

Feedback Capmax Crss

3.8 pF

Terminal Sayısı

3

Yayın Yılı

2007

Vgsth Max Id

1.4V @ 250μA

REACH Uyumluluk Kodu

compliant

HTS Kodu

8541.21.00.95

Pin Sayısı

3

Yüzey Montaj

YES

Power Dissipation Max

360mW Ta

Ambalaj

Tape & Reel (TR)

Drain Currentmax Abs Id

0.23A

RoHS Durumu

RoHS Compliant

Transistor Element Material

SILICON

Jesd30 Code

R-PDSO-G3

Configuration

SINGLE WITH BUILT-IN DIODE

Fet Type

N-Channel

Vgs Max

±20V

Kılıf / Paket

TO-236-3, SC-59, SOT-23-3

Tepe Reflow Süresi (maks. sn)

40

Çalışma Sıcaklığı

-55°C~150°C TJ

Terminal Formu

GULL WING

Additional Feature

LOGIC LEVEL COMPATIBLE

Rds On Max Id Vgs

3.5 Ω @ 230mA, 10V

Drain To Source Voltage Vdss

60V

Gate Charge Qg Max Vgs

1.4nC @ 10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Current Continuous Drain Id25

230mA Ta

Tepe Reflow Sıcaklığı (°C)

260

Qualification Status

Not Qualified

Terminal Kaplaması

Matte Tin (Sn)

Parça Durumu

Obsolete

Number Of Elements

1

Operating Mode

ENHANCEMENT MODE

Seri

SIPMOS®

Montaj Tipi

Surface Mount

Input Capacitance Ciss Max Vds

41pF @ 25V