BSS131H6327XTSA1

Specifications

Continuous Drain Current Id

100mA

Current Continuous Drain Id25

110mA Ta

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Additional Feature

LOGIC LEVEL COMPATIBLE

Terminal Pozisyonu

DUAL

Input Capacitance Ciss Max Vds

77pF @ 25V

Genişlik

3.05mm

Yükseklik

1.1mm

Operating Mode

ENHANCEMENT MODE

Seri

SIPMOS®

Number Of Elements

1

Vgsth Max Id

1.8V @ 56μA

Yayın Yılı

1997

Contact Plating

Tin

JESD-609 Kodu

e3

Max Junction Temperature Tj

150°C

Fabrika Tedarik Süresi

10 Weeks

Nominal Vgs

1.4 V

Fet Type

N-Channel

Çalışma Sıcaklığı

-55°C~150°C TJ

Transistor Element Material

SILICON

Ambalaj

Tape & Reel (TR)

Pin Sayısı

3

Turn Off Delay Time

13.7 ns

Drain To Source Breakdown Voltage

240V

Montaj

Surface Mount

Nem Hassasiyeti (MSL)

1 (Unlimited)

Gate To Source Voltage Vgs

20V

Gate Charge Qg Max Vgs

3.1nC @ 10V

Terminal Formu

GULL WING

Turn On Delay Time

3.3 ns

Number Of Channels

1

Rds On Max Id Vgs

14 Ω @ 100mA, 10V

Radyasyon Dayanımı

No

Montaj Tipi

Surface Mount

Parça Durumu

Active

Rise Time

3.1ns

Feedback Capmax Crss

4.2 pF

Terminal Sayısı

3

ECCN Kodu

EAR99