BSS123NH6433XTMA1

Specifications

Drainsource On Resistancemax

6Ohm

Power Dissipation Max

500mW Ta

Ambalaj

Cut Tape (CT)

Kurşunsuz Kodu

yes

RoHS Durumu

ROHS3 Compliant

Drain Currentmax Abs Id

0.19A

Transistor Element Material

SILICON

Çalışma Sıcaklığı

-55°C~150°C TJ

Kılıf / Paket

TO-236-3, SC-59, SOT-23-3

Fet Type

N-Channel

Vgs Max

±20V

Ds Breakdown Voltagemin

100V

Fabrika Tedarik Süresi

10 Weeks

Yayın Yılı

2012

Terminal Sayısı

3

Rise Time

3.2ns

Vgsth Max Id

1.8V @ 13μA

Element Configuration

Single

Uzunluk

2.9mm

Number Of Elements

1

Fall Time Typ

22 ns

Parça Durumu

Active

Seri

OptiMOS™

Operating Mode

ENHANCEMENT MODE

Yükseklik

1mm

Montaj Tipi

Surface Mount

Genişlik

1.3mm

Terminal Pozisyonu

DUAL

Input Capacitance Ciss Max Vds

20.9pF @ 25V

Rds On Max Id Vgs

6 Ω @ 190mA, 10V

Drain To Source Voltage Vdss

100V

Additional Feature

LOGIC LEVEL COMPATIBLE

Terminal Formu

GULL WING

Turn On Delay Time

2.3 ns

Gate Charge Qg Max Vgs

0.9nC @ 10V

Gate To Source Voltage Vgs

20V

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Reference Standard

AEC-Q101

Montaj

Surface Mount