BSS123NH6327XTSA1

Specifications

Yükseklik

1.1mm

Genişlik

1.3mm

Terminal Pozisyonu

DUAL

Input Capacitance Ciss Max Vds

20.9pF @ 25V

Number Of Elements

1

Terminal Kaplaması

Tin (Sn)

Operating Mode

ENHANCEMENT MODE

Seri

OptiMOS™

Current Continuous Drain Id25

190mA Ta

Continuous Drain Current Id

190mA

Tepe Reflow Sıcaklığı (°C)

260

Additional Feature

LOGIC LEVEL COMPATIBLE

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Transistor Element Material

SILICON

Çalışma Sıcaklığı

-55°C~150°C TJ

Tepe Reflow Süresi (maks. sn)

30

Fet Type

N-Channel

Drainsource On Resistancemax

6Ohm

Ambalaj

Cut Tape (CT)

Yayın Yılı

2012

Uzunluk

2.9mm

Element Configuration

Single

Vgsth Max Id

1.8V @ 13μA

Fabrika Tedarik Süresi

10 Weeks

Max Junction Temperature Tj

150°C

JESD-609 Kodu

e3

Montaj Tipi

Surface Mount

Radyasyon Dayanımı

No

Fall Time Typ

22 ns

Parça Durumu

Active

Montaj

Surface Mount

Turn Off Delay Time

7.4 ns

Drain To Source Breakdown Voltage

100V

Pin Sayısı

3

Rds On Max Id Vgs

6 Ω @ 190mA, 10V

Turn On Delay Time

2.3 ns

Terminal Formu

GULL WING

Number Of Channels

1

Gate To Source Voltage Vgs

20V

Nem Hassasiyeti (MSL)

1 (Unlimited)