BSS119NH6327XTSA1

Specifications

Max Junction Temperature Tj

150°C

JESD-609 Kodu

e3

Fabrika Tedarik Süresi

10 Weeks

Vgsth Max Id

2.3V @ 13μA

Element Configuration

Single

Uzunluk

2.9mm

Contact Plating

Tin

Yayın Yılı

2002

Ambalaj

Cut Tape (CT)

Drainsource On Resistancemax

6Ohm

Çalışma Sıcaklığı

-55°C~150°C TJ

Tepe Reflow Süresi (maks. sn)

40

Fet Type

N-Channel

Transistor Element Material

SILICON

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Additional Feature

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Tepe Reflow Sıcaklığı (°C)

260

Continuous Drain Current Id

190mA

Current Continuous Drain Id25

190mA Ta

Operating Mode

ENHANCEMENT MODE

Seri

OptiMOS™

Number Of Elements

1

Genişlik

1.3mm

Terminal Pozisyonu

DUAL

Input Capacitance Ciss Max Vds

20.9pF @ 25V

Yükseklik

1.1mm

ECCN Kodu

EAR99

Terminal Sayısı

3

Rise Time

3.3ns

Power Dissipation Max

500mW Ta

Kurşunsuz Kodu

yes

Kurşunsuz

Lead Free

Halogen Free

Halogen Free

Max Dual Supply Voltage

100V

Kılıf / Paket

TO-236-3, SC-59, SOT-23-3

Vgs Max

±20V

RoHS Durumu

ROHS3 Compliant

Power Dissipation

500mW

Gate Charge Qg Max Vgs

0.6nC @ 10V

Nem Hassasiyeti (MSL)

1 (Unlimited)