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BSR802NL6327HTSA1

Infineon Technologies

BSR802NL6327HTSA1

Single MOSFETs Transistors

In StockRoHS: Compliant

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RoHS

Compliant

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Specifications

Pin Sayısı
3
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Current Continuous Drain Id25
3.7A Ta
Continuous Drain Current Id
3.7A
Montaj
Surface Mount
Gate Charge Qg Max Vgs
4.7nC @ 2.5V
Drive Voltage Max Rds On Min Rds On
1.8V 2.5V
Nem Hassasiyeti (MSL)
1 (Unlimited)
Gate To Source Voltage Vgs
8V
Terminal Formu
GULL WING
Rds On Max Id Vgs
23m Ω @ 3.7A, 2.5V
Additional Feature
AVALANCHE RATED
Terminal Pozisyonu
DUAL
Input Capacitance Ciss Max Vds
1447pF @ 10V
Montaj Tipi
Surface Mount
Seri
OptiMOS™
Operating Mode
ENHANCEMENT MODE
Qualification Status
Not Qualified
Parça Durumu
Active
Number Of Elements
1
Vgsth Max Id
750mV @ 30μA
Rise Time
18ns
Yayın Yılı
2011
Contact Plating
Tin
Terminal Sayısı
3
JESD-609 Kodu
e3
ECCN Kodu
EAR99
Fabrika Tedarik Süresi
10 Weeks
Configuration
SINGLE WITH BUILT-IN DIODE
Fet Type
N-Channel
Vgs Max
±8V
Max Dual Supply Voltage
20V
Çalışma Sıcaklığı
-55°C~150°C TJ
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Kılıf / Paket
TO-236-3, SC-59, SOT-23-3
RoHS Durumu
ROHS3 Compliant
Drain Currentmax Abs Id
2.9A
Transistor Element Material
SILICON
Power Dissipation Max
500mW Ta
Ambalaj
Tape & Reel (TR)

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