Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Power Dissipation Max
- 500mW Ta
- Ambalaj
- Tape & Reel (TR)
- Kurşunsuz Kodu
- yes
- Drainsource On Resistancemax
- 0.021Ohm
- Pin Sayısı
- 3
- Fet Type
- N-Channel
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Vgs Max
- ±12V
- Max Dual Supply Voltage
- 20V
- Kılıf / Paket
- TO-236-3, SC-59, SOT-23-3
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- RoHS Durumu
- ROHS3 Compliant
- Transistor Element Material
- SILICON
- JESD-609 Kodu
- e3
- ECCN Kodu
- EAR99
- Fabrika Tedarik Süresi
- 10 Weeks
- HTS Kodu
- 8541.21.00.95
- Vgsth Max Id
- 1.2V @ 30μA
- Rise Time
- 16.7ns
- Feedback Capmax Crss
- 60 pF
- Yayın Yılı
- 2012
- Contact Plating
- Tin
- Terminal Sayısı
- 3
- Operating Mode
- ENHANCEMENT MODE
- Seri
- OptiMOS™
- Qualification Status
- Not Qualified
- Parça Durumu
- Active
- Number Of Elements
- 1
- Input Capacitance Ciss Max Vds
- 1147pF @ 10V
- Terminal Pozisyonu
- DUAL
- Montaj Tipi
- Surface Mount
- Gate Charge Qg Max Vgs
- 8.8nC @ 4.5V
- Gate To Source Voltage Vgs
- 12V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Drive Voltage Max Rds On Min Rds On
- 2.5V 4.5V
- Terminal Formu
- GULL WING
- Additional Feature
- AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
- Rds On Max Id Vgs
- 21m Ω @ 3.8A, 4.5V
- Pin Sayısı
- 3
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