BSP318SL6327HTSA1

Specifications

Kılıf / Paket

TO-261-4, TO-261AA

RoHS Durumu

RoHS Compliant

Fall Time Typ

15 ns

Gate Charge Qg Max Vgs

20nC @ 10V

Terminal Pozisyonu

DUAL

Seri

SIPMOS®

Number Of Elements

1

Configuration

SINGLE WITH BUILT-IN DIODE

Terminal Sayısı

4

Power Dissipation

1.8W

Transistor Element Material

SILICON

Yayın Yılı

1999

Montaj

Surface Mount

Parça Durumu

Obsolete

Vgsth Max Id

2V @ 20μA

Fet Type

N-Channel

Rds On Max Id Vgs

90m Ω @ 2.6A, 10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ds Breakdown Voltagemin

60V

Input Capacitance Ciss Max Vds

380pF @ 25V

Terminal Formu

GULL WING

Turn On Delay Time

12 ns

Continuous Drain Current Id

2.6A

Drain To Source Voltage Vdss

60V

Gate To Source Voltage Vgs

20V

Avalanche Energy Rating Eas

60 mJ

Current Continuous Drain Id25

2.6A Ta

Vgs Max

±20V

Montaj Tipi

Surface Mount

Çalışma Sıcaklığı

-55°C~150°C TJ

Operating Mode

ENHANCEMENT MODE

Rise Time

15ns

Additional Feature

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Ambalaj

Tape & Reel (TR)

Power Dissipation Max

1.8W Ta

Turn Off Delay Time

20 ns

Radyasyon Dayanımı

No

Pin Sayısı

4

Case Connection

DRAIN

Drive Voltage Max Rds On Min Rds On

4.5V 10V