BSP316PH6327XTSA1

Specifications

Gate Charge Qg Max Vgs

6.4nC @ 10V

Terminal Pozisyonu

DUAL

Seri

SIPMOS®

Terminal Sayısı

4

ECCN Kodu

EAR99

Yükseklik

1.6mm

Fall Time Typ

25.9 ns

Terminal Formu

GULL WING

Turn On Delay Time

4.7 ns

Power Dissipation

1.8W

Element Configuration

Single

Parça Durumu

Active

Vgsth Max Id

2V @ 170μA

Operating Mode

ENHANCEMENT MODE

Additional Feature

LOGIC LEVEL COMPATIBLE

Uzunluk

6.5mm

Power Dissipation Max

1.8W Ta

Pulsed Drain Currentmax Idm

2.72A

Max Dual Supply Voltage

-100V

Vgs Max

±20V

Montaj Tipi

Surface Mount

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Pin Sayısı

4

Case Connection

DRAIN

Kurşunsuz Kodu

yes

Kurşunsuz

Lead Free

Fabrika Tedarik Süresi

10 Weeks

Contact Plating

Tin

Number Of Elements

1

Kılıf / Paket

TO-261-4, TO-261AA

RoHS Durumu

ROHS3 Compliant

Rds On Max Id Vgs

1.8 Ω @ 680mA, 10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Input Capacitance Ciss Max Vds

146pF @ 25V

Halogen Free

Halogen Free

Continuous Drain Current Id

680mA

Drain To Source Voltage Vdss

100V

Transistor Element Material

SILICON

Yayın Yılı

2002

Genişlik

3.5mm