Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Fet Feature
- Depletion Mode
- JESD-609 Kodu
- e3
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Current Continuous Drain Id25
- 350mA Ta
- Terminal
- SMD/SMT
- Nominal Vgs
- -1.4 V
- Gate To Source Voltage Vgs
- 20V
- Turn Off Delay Time
- 22 ns
- Pin Sayısı
- 4
- Drainsource On Resistancemax
- 20Ohm
- Ambalaj
- Cut Tape (CT)
- Rise Time
- 4.1ns
- Fet Type
- N-Channel
- Montaj
- Surface Mount
- Max Junction Temperature Tj
- 150°C
- Genişlik
- 3.5mm
- Yayın Yılı
- 2012
- Transistor Element Material
- SILICON
- Continuous Drain Current Id
- 120mA
- Halogen Free
- Halogen Free
- Input Capacitance Ciss Max Vds
- 108pF @ 25V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Drain To Source Breakdown Voltage
- 240V
- Threshold Voltage
- -2.1V
- Rds On Max Id Vgs
- 6 Ω @ 350mA, 10V
- Number Of Channels
- 1
- RoHS Durumu
- ROHS3 Compliant
- Akım
- 35A
- Kılıf / Paket
- TO-261-4, TO-261AA
- Contact Plating
- Tin
- Number Of Elements
- 1
- Fabrika Tedarik Süresi
- 10 Weeks
- Kurşunsuz
- Lead Free
- Kurşunsuz Kodu
- yes
- Case Connection
- DRAIN
- Pin Sayısı
- 4
- Radyasyon Dayanımı
- No
- Dual Supply Voltage
- 240V
- Drive Voltage Max Rds On Min Rds On
- 0V 10V
- Montaj Tipi
- Surface Mount
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