BSO220N03MSGXUMA1

Specifications

Ds Breakdown Voltagemin

30V

Yayın Yılı

2011

Terminal Formu

GULL WING

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

ECCN Kodu

EAR99

Gate To Source Voltage Vgs

20V

Power Dissipation

1.56W

RoHS Durumu

RoHS Compliant

Montaj

Surface Mount

Input Capacitance Ciss Max Vds

800pF @ 15V

Ambalaj

Tape & Reel (TR)

Çalışma Sıcaklığı

-55°C~150°C TJ

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Drainsource On Resistancemax

0.022Ohm

Fet Type

N-Channel

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Gate Charge Qg Max Vgs

10.4nC @ 10V

Continuous Drain Current Id

7A

Transistor Application

SWITCHING

Vgsth Max Id

2.1V @ 250μA

Rds On Max Id Vgs

22m Ω @ 8.6A, 10V

Parça Durumu

Obsolete

Nem Hassasiyeti (MSL)

3 (168 Hours)

Vgs Max

±20V

Terminal Sayısı

8

Seri

OptiMOS™

Transistor Element Material

SILICON

Operating Mode

ENHANCEMENT MODE

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Drain To Source Voltage Vdss

30V

Number Of Elements

1

Pin Sayısı

8

Configuration

SINGLE WITH BUILT-IN DIODE

Power Dissipation Max

1.56W Ta

Montaj Tipi

Surface Mount

Terminal Pozisyonu

DUAL

Current Continuous Drain Id25

7A Ta