BSO104N03S

Specifications

Power Dissipation Max

1.56W Ta

Drain To Source Breakdown Voltage

30V

Terminal Pozisyonu

DUAL

Kurşunsuz

Lead Free

Pin Sayısı

8

Number Of Elements

1

Configuration

SINGLE WITH BUILT-IN DIODE

Vgs Max

±20V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fall Time Typ

4.2 ns

Qualification Status

Not Qualified

Seri

OptiMOS™

Turn On Delay Time

5 ns

Transistor Application

SWITCHING

Akım Değeri

13A

Rds On Max Id Vgs

9.7m Ω @ 13A, 10V

Drainsource On Resistancemax

0.0097Ohm

Jedec95 Code

MS-012AA

Continuous Drain Current Id

10A

Gate Charge Qg Max Vgs

16nC @ 5V

Input Capacitance Ciss Max Vds

2130pF @ 15V

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Power Dissipation

1.56W

Terminal Kaplaması

MATTE TIN

Rise Time

4.2ns

Pin Sayısı

8

Current Continuous Drain Id25

10A Tc

Montaj Tipi

Surface Mount

Additional Feature

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Operating Mode

ENHANCEMENT MODE

Terminal Sayısı

8

Transistor Element Material

SILICON

Vgsth Max Id

2V @ 30μA

Parça Durumu

Obsolete

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Fet Type

N-Channel

Voltage Rated Dc

30V

Tepe Reflow Sıcaklığı (°C)

260

Çalışma Sıcaklığı

-55°C~150°C TJ