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BSO033N03MSGXUMA1

Infineon Technologies

BSO033N03MSGXUMA1

Single MOSFETs Transistors

In StockRoHS: Compliant

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Specifications

Contact Plating
Tin
Kurşunsuz
Lead Free
Pin Sayısı
8
Operating Mode
ENHANCEMENT MODE
Number Of Elements
1
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation Max
1.56W Ta
Rise Time
12.8ns
Current Continuous Drain Id25
17A Ta
Terminal Pozisyonu
DUAL
Montaj Tipi
Surface Mount
Vgsth Max Id
2V @ 250μA
Transistor Application
SWITCHING
Parça Durumu
Active
Rds On Max Id Vgs
3.3m Ω @ 22A, 10V
Terminal Sayısı
8
Nem Hassasiyeti (MSL)
3 (168 Hours)
Vgs Max
±20V
Seri
OptiMOS™
Transistor Element Material
SILICON
RoHS Durumu
ROHS3 Compliant
Ambalaj
Tape & Reel (TR)
Input Capacitance Ciss Max Vds
9600pF @ 15V
Montaj
Surface Mount
Fet Type
N-Channel
Drainsource On Resistancemax
0.0033Ohm
Drive Voltage Max Rds On Min Rds On
4.5V 10V
Çalışma Sıcaklığı
-55°C~150°C TJ
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Fabrika Tedarik Süresi
18 Weeks
JESD-609 Kodu
e3
Continuous Drain Current Id
17A
Gate Charge Qg Max Vgs
124nC @ 10V
Yayın Yılı
2009
Max Dual Supply Voltage
30V
Terminal Formu
GULL WING
Gate To Source Voltage Vgs
20V
Kılıf / Paket
8-SOIC (0.154, 3.90mm Width)
Halogen Free
Halogen Free

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