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BSL303SPEH6327XTSA1

Infineon Technologies

BSL303SPEH6327XTSA1

Single MOSFETs Transistors

In StockRoHS: Compliant

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Specifications

Rds On Max Id Vgs
33m Ω @ 6.3A, 10V
Yayın Yılı
2013
Continuous Drain Current Id
6.3A
Nem Hassasiyeti (MSL)
1 (Unlimited)
Input Capacitance Ciss Max Vds
1401pF @ 15V
Pulsed Drain Currentmax Idm
25.2A
Max Dual Supply Voltage
-30V
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Fabrika Tedarik Süresi
12 Weeks
Current Continuous Drain Id25
6.3A Ta
Jesd30 Code
R-PDSO-G6
Drive Voltage Max Rds On Min Rds On
4.5V 10V
Vgs Max
±20V
JESD-609 Kodu
e3
Number Of Elements
1
Power Dissipation Max
2W Ta
Kılıf / Paket
SOT-23-6 Thin, TSOT-23-6
Gate Charge Qg Max Vgs
20.9nC @ 10V
Terminal Formu
GULL WING
Terminal Kaplaması
Tin (Sn)
Halogen Free
Halogen Free
Seri
OptiMOS™
Kurşunsuz
Lead Free
Parça Durumu
Obsolete
Terminal Sayısı
6
Configuration
SINGLE WITH BUILT-IN DIODE
Montaj Tipi
Surface Mount
RoHS Durumu
ROHS3 Compliant
Kurşunsuz Kodu
yes
Çalışma Sıcaklığı
-55°C~150°C TJ
Drainsource On Resistancemax
0.033Ohm
Ambalaj
Tape & Reel (TR)
Drain To Source Voltage Vdss
30V
Additional Feature
AVALANCHE RATED
Avalanche Energy Rating Eas
30 mJ
Reference Standard
AEC-Q101
Transistor Element Material
SILICON
Terminal Pozisyonu
DUAL
Fet Type
P-Channel
Vgsth Max Id
2V @ 30μA

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