BSC886N03LSGATMA1

Specifications

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Terminal Pozisyonu

DUAL

Gate To Source Voltage Vgs

20V

Configuration

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating Eas

20 mJ

Vgsth Max Id

2.2V @ 250μA

Terminal Formu

NO LEAD

Transistor Element Material

SILICON

Fet Type

N-Channel

Power Dissipation

2.5W

Rds On Max Id Vgs

6m Ω @ 30A, 10V

Gate Charge Qg Max Vgs

26nC @ 10V

Additional Feature

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

Turn On Delay Time

4.2 ns

Parça Durumu

Active

Case Connection

DRAIN

Fabrika Tedarik Süresi

26 Weeks

ECCN Kodu

EAR99

RoHS Durumu

ROHS3 Compliant

Montaj

Surface Mount

Turn Off Delay Time

18 ns

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Fall Time Typ

3 ns

Pulsed Drain Currentmax Idm

260A

Seri

OptiMOS™

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Transistor Application

SWITCHING

Pin Sayısı

8

Drain To Source Voltage Vdss

30V

Ambalaj

Tape & Reel (TR)

Rise Time

3.2ns

Montaj Tipi

Surface Mount

Nem Hassasiyeti (MSL)

1 (Unlimited)

Continuous Drain Current Id

65A

Jesd30 Code

R-PDSO-N5

Power Dissipation Max

2.5W Ta 39W Tc

Current Continuous Drain Id25

13A Ta 65A Tc

Terminal Sayısı

5

Vgs Max

±20V

Input Capacitance Ciss Max Vds

2100pF @ 15V