BSC350N20NSFDATMA1

Specifications

Number Of Channels

1

RoHS Durumu

ROHS3 Compliant

ECCN Kodu

EAR99

Input Capacitance Ciss Max Vds

2410pF @ 100V

Number Of Elements

1

Turn Off Delay Time

17 ns

Kılıf / Paket

8-PowerTDFN

Çalışma Sıcaklığı

-55°C~175°C TJ

Drive Voltage Max Rds On Min Rds On

10V

Yayın Yılı

2013

Operating Mode

ENHANCEMENT MODE

Drainsource On Resistancemax

0.035Ohm

Seri

OptiMOS™

Gate Charge Qg Max Vgs

30nC @ 10V

JESD-609 Kodu

e3

Power Dissipation Max

150W Tc

Turn On Delay Time

8 ns

Current Continuous Drain Id25

35A Tc

Parça Durumu

Active

Case Connection

DRAIN

Fabrika Tedarik Süresi

26 Weeks

Terminal Sayısı

5

Vgs Max

±20V

Montaj Tipi

Surface Mount

Max Junction Temperature Tj

175°C

Terminal Formu

FLAT

Transistor Element Material

SILICON

Fet Type

N-Channel

REACH Uyumluluk Kodu

not_compliant

Yüzey Montaj

YES

Power Dissipation

150W

Nem Hassasiyeti (MSL)

1 (Unlimited)

Continuous Drain Current Id

35A

Jesd30 Code

R-PDSO-F5

Rds On Max Id Vgs

35m Ω @ 35A, 10V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Transistor Application

SWITCHING

Terminal Pozisyonu

DUAL

Yükseklik

1.1mm