BSC265N10LSFGATMA1

Specifications

Transistor Element Material

SILICON

Fet Type

N-Channel

Terminal Formu

FLAT

Rds On Max Id Vgs

26.5m Ω @ 20A, 10V

Power Dissipation

78W

Kurşunsuz

Contains Lead

Terminal Pozisyonu

DUAL

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Vgsth Max Id

2.4V @ 43μA

Max Dual Supply Voltage

100V

Configuration

SINGLE WITH BUILT-IN DIODE

Gate To Source Voltage Vgs

20V

Drive Voltage Max Rds On Min Rds On

4.5V 10V

ECCN Kodu

EAR99

RoHS Durumu

ROHS3 Compliant

Montaj

Surface Mount

Seri

OptiMOS™

Kurşunsuz Kodu

no

Additional Feature

LOGIC LEVEL COMPATIBLE

Drain Currentmax Abs Id

6.5A

JESD-609 Kodu

e3

Gate Charge Qg Max Vgs

21nC @ 10V

Fabrika Tedarik Süresi

13 Weeks

Case Connection

DRAIN

Parça Durumu

Active

Rise Time

24ns

Montaj Tipi

Surface Mount

Halogen Free

Halogen Free

Continuous Drain Current Id

40A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Jesd30 Code

R-PDSO-F5

REACH Uyumluluk Kodu

not_compliant

Pin Sayısı

8

Transistor Application

SWITCHING

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Ambalaj

Tape & Reel (TR)

Çalışma Sıcaklığı

-55°C~150°C TJ

Kılıf / Paket

8-PowerTDFN

Reach Svhc

No SVHC

Input Capacitance Ciss Max Vds

1600pF @ 50V