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BSC252N10NSFGATMA1

Infineon Technologies

BSC252N10NSFGATMA1

Single MOSFETs Transistors

In StockRoHS: Compliant

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Specifications

Gate To Source Voltage Vgs
20V
Max Dual Supply Voltage
100V
Configuration
SINGLE WITH BUILT-IN DIODE
Ambalaj
Tape & Reel (TR)
Vgsth Max Id
4V @ 43μA
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Transistor Application
SWITCHING
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Terminal Pozisyonu
DUAL
Pin Sayısı
8
Kurşunsuz
Contains Lead
REACH Uyumluluk Kodu
not_compliant
Power Dissipation
78W
Continuous Drain Current Id
7.2A
Nem Hassasiyeti (MSL)
1 (Unlimited)
Rds On Max Id Vgs
25.2m Ω @ 20A, 10V
Jesd30 Code
R-PDSO-F5
Montaj Tipi
Surface Mount
Halogen Free
Halogen Free
Rise Time
21ns
Terminal Formu
FLAT
Transistor Element Material
SILICON
Fet Type
N-Channel
Parça Durumu
Active
Case Connection
DRAIN
Fabrika Tedarik Süresi
13 Weeks
Terminal Sayısı
5
Vgs Max
±20V
JESD-609 Kodu
e3
Gate Charge Qg Max Vgs
17nC @ 10V
Power Dissipation Max
78W Tc
Contact Plating
Tin
Qualification Status
Not Qualified
Current Continuous Drain Id25
7.2A Ta 40A Tc
Yayın Yılı
2010
Kurşunsuz Kodu
no
Operating Mode
ENHANCEMENT MODE
Seri
OptiMOS™
Drainsource On Resistancemax
0.0252Ohm
Pin Sayısı
8

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