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BSC196N10NSGATMA1

Infineon Technologies

BSC196N10NSGATMA1

Single MOSFETs Transistors

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Specifications

Ambalaj
Tape & Reel (TR)
Pin Sayısı
8
Transistor Application
SWITCHING
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Continuous Drain Current Id
45A
Nem Hassasiyeti (MSL)
1 (Unlimited)
Jesd30 Code
R-PDSO-F5
REACH Uyumluluk Kodu
not_compliant
Halogen Free
Halogen Free
Montaj Tipi
Surface Mount
Rise Time
22ns
Vgs Max
±20V
Terminal Sayısı
5
Current Continuous Drain Id25
8.5A Ta 45A Tc
Power Dissipation Max
78W Tc
Contact Plating
Tin
Qualification Status
Not Qualified
Operating Mode
ENHANCEMENT MODE
Yayın Yılı
2011
Threshold Voltage
3V
Çalışma Sıcaklığı
-55°C~150°C TJ
Reach Svhc
No SVHC
Kılıf / Paket
8-PowerTDFN
Number Of Elements
1
Input Capacitance Ciss Max Vds
2300pF @ 50V
Pin Sayısı
8
Avalanche Energy Rating Eas
60 mJ
Vgsth Max Id
4V @ 42μA
Max Dual Supply Voltage
100V
Configuration
SINGLE WITH BUILT-IN DIODE
Gate To Source Voltage Vgs
20V
Kurşunsuz
Contains Lead
Terminal Pozisyonu
DUAL
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Rds On Max Id Vgs
19.6m Ω @ 45A, 10V
Power Dissipation
78W
Transistor Element Material
SILICON
Fet Type
N-Channel
Terminal Formu
FLAT
Fabrika Tedarik Süresi
26 Weeks

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