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BSC190N12NS3GATMA1

Infineon Technologies

BSC190N12NS3GATMA1

Single MOSFETs Transistors

In StockRoHS: Compliant

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Verified sourcing

RoHS

Compliant

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Specifications

Max Dual Supply Voltage
120V
Configuration
SINGLE WITH BUILT-IN DIODE
Gate To Source Voltage Vgs
20V
Vgsth Max Id
4V @ 42μA
Avalanche Energy Rating Eas
60 mJ
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Kurşunsuz
Contains Lead
Terminal Kaplaması
Tin (Sn)
Terminal Pozisyonu
DUAL
Power Dissipation
69W
Rds On Max Id Vgs
19m Ω @ 39A, 10V
Terminal Formu
FLAT
Transistor Element Material
SILICON
Fet Type
N-Channel
Case Connection
DRAIN
Parça Durumu
Active
Fabrika Tedarik Süresi
26 Weeks
JESD-609 Kodu
e3
Gate Charge Qg Max Vgs
34nC @ 10V
Turn On Delay Time
17 ns
Kurşunsuz Kodu
no
Seri
OptiMOS™
RoHS Durumu
ROHS3 Compliant
ECCN Kodu
EAR99
Montaj
Surface Mount
Fall Time Typ
4 ns
Drive Voltage Max Rds On Min Rds On
10V
Turn Off Delay Time
22 ns
Ambalaj
Tape & Reel (TR)
Transistor Application
SWITCHING
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Pin Sayısı
8
REACH Uyumluluk Kodu
not_compliant
Continuous Drain Current Id
8.6A
Nem Hassasiyeti (MSL)
1 (Unlimited)
Jesd30 Code
R-PDSO-F5
Halogen Free
Halogen Free
Montaj Tipi
Surface Mount
Rise Time
16ns
Vgs Max
±20V

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