BSC160N15NS5ATMA1

Specifications

Montaj Tipi

Surface Mount

Terminal Formu

FLAT

Max Junction Temperature Tj

150°C

Transistor Element Material

SILICON

Fet Type

N-Channel

REACH Uyumluluk Kodu

not_compliant

Yüzey Montaj

YES

Power Dissipation

96W

Nem Hassasiyeti (MSL)

1 (Unlimited)

Continuous Drain Current Id

56A

Jesd30 Code

R-PDSO-F5

Rds On Max Id Vgs

16m Ω @ 28A, 10V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Transistor Application

SWITCHING

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Yükseklik

1.1mm

Terminal Pozisyonu

DUAL

Gate To Source Voltage Vgs

20V

Configuration

SINGLE WITH BUILT-IN DIODE

Drain To Source Breakdown Voltage

150V

Ambalaj

Tape & Reel (TR)

Vgsth Max Id

4.6V @ 60μA

Avalanche Energy Rating Eas

43 mJ

Number Of Channels

1

RoHS Durumu

ROHS3 Compliant

ECCN Kodu

EAR99

Input Capacitance Ciss Max Vds

1820pF @ 75V

Number Of Elements

1

Turn Off Delay Time

10.8 ns

Kılıf / Paket

8-PowerTDFN

Çalışma Sıcaklığı

-55°C~150°C TJ

Drive Voltage Max Rds On Min Rds On

8V 10V

Yayın Yılı

2013

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

224A

Seri

OptiMOS™

Gate Charge Qg Max Vgs

23.1nC @ 10V

Power Dissipation Max

96W Tc

Turn On Delay Time

9.6 ns

Current Continuous Drain Id25

56A Tc