BSC12DN20NS3GATMA1

Specifications

Turn Off Delay Time

10 ns

Fall Time Typ

3 ns

Drive Voltage Max Rds On Min Rds On

10V

ECCN Kodu

EAR99

RoHS Durumu

ROHS3 Compliant

Montaj

Surface Mount

Pulsed Drain Currentmax Idm

45A

Seri

OptiMOS™

Kurşunsuz Kodu

no

Turn On Delay Time

6 ns

Gate Charge Qg Max Vgs

8.7nC @ 10V

JESD-609 Kodu

e3

Fabrika Tedarik Süresi

26 Weeks

Parça Durumu

Active

Case Connection

DRAIN

Transistor Element Material

SILICON

Fet Type

N-Channel

Terminal Formu

FLAT

Rds On Max Id Vgs

125m Ω @ 5.7A, 10V

Terminal Pozisyonu

DUAL

Kurşunsuz

Contains Lead

Terminal Kaplaması

Tin (Sn)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Avalanche Energy Rating Eas

60 mJ

Vgsth Max Id

4V @ 25μA

Gate To Source Voltage Vgs

20V

Max Dual Supply Voltage

200V

Configuration

SINGLE WITH BUILT-IN DIODE

Kılıf / Paket

8-PowerTDFN

Çalışma Sıcaklığı

-55°C~150°C TJ

Pin Sayısı

8

Number Of Elements

1

Input Capacitance Ciss Max Vds

680pF @ 100V

Drainsource On Resistancemax

0.125Ohm

Yayın Yılı

2010

Operating Mode

ENHANCEMENT MODE

Power Dissipation Max

50W Tc

Qualification Status

Not Qualified

Current Continuous Drain Id25

11.3A Tc

Terminal Sayısı

5