BSC123N08NS3GATMA1

Specifications

Pulsed Drain Currentmax Idm

220A

Seri

OptiMOS™

Kurşunsuz Kodu

no

Turn Off Delay Time

19 ns

Fall Time Typ

4 ns

Drive Voltage Max Rds On Min Rds On

6V 10V

Montaj

Surface Mount

ECCN Kodu

EAR99

RoHS Durumu

ROHS3 Compliant

Fabrika Tedarik Süresi

26 Weeks

Parça Durumu

Active

Case Connection

DRAIN

Turn On Delay Time

12 ns

JESD-609 Kodu

e3

Gate Charge Qg Max Vgs

25nC @ 10V

Drain Currentmax Abs Id

55A

Rds On Max Id Vgs

12.3m Ω @ 33A, 10V

Radyasyon Dayanımı

No

Power Dissipation

66W

Fet Type

N-Channel

Transistor Element Material

SILICON

Terminal Formu

FLAT

Vgsth Max Id

3.5V @ 33μA

Avalanche Energy Rating Eas

70 mJ

Gate To Source Voltage Vgs

20V

Configuration

SINGLE WITH BUILT-IN DIODE

Max Dual Supply Voltage

80V

Terminal Pozisyonu

DUAL

Terminal Kaplaması

Tin (Sn)

Kurşunsuz

Contains Lead

Yayın Yılı

2011

Operating Mode

ENHANCEMENT MODE

Kılıf / Paket

8-PowerTDFN

Çalışma Sıcaklığı

-55°C~150°C TJ

Pin Sayısı

8

Input Capacitance Ciss Max Vds

1870pF @ 40V

Number Of Elements

1

Terminal Sayısı

5

Vgs Max

±20V

Power Dissipation Max

2.5W Ta 66W Tc