BSC120N03LSGATMA1

Specifications

Transistor Application

SWITCHING

Pin Sayısı

8

Kurşunsuz

Contains Lead

Terminal Kaplaması

Tin (Sn)

Terminal Pozisyonu

DUAL

Max Dual Supply Voltage

30V

Configuration

SINGLE WITH BUILT-IN DIODE

Gate To Source Voltage Vgs

20V

Vgsth Max Id

2.2V @ 250μA

Ambalaj

Tape & Reel (TR)

Rise Time

2.2ns

Halogen Free

Halogen Free

Montaj Tipi

Surface Mount

Terminal Formu

FLAT

Transistor Element Material

SILICON

Fet Type

N-Channel

Power Dissipation

28W

Nem Hassasiyeti (MSL)

1 (Unlimited)

Continuous Drain Current Id

12A

Jesd30 Code

R-PDSO-F5

Rds On Max Id Vgs

12m Ω @ 30A, 10V

Radyasyon Dayanımı

No

Gate Charge Qg Max Vgs

15nC @ 10V

JESD-609 Kodu

e3

Turn On Delay Time

2.7 ns

Current Continuous Drain Id25

12A Ta 39A Tc

Additional Feature

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Power Dissipation Max

2.5W Ta 28W Tc

Case Connection

DRAIN

Parça Durumu

Active

Vgs Max

±20V

Fabrika Tedarik Süresi

26 Weeks

Terminal Sayısı

5

RoHS Durumu

ROHS3 Compliant

ECCN Kodu

EAR99

Input Capacitance Ciss Max Vds

1200pF @ 15V

Number Of Elements

1

Montaj

Surface Mount

Pin Sayısı

8

Çalışma Sıcaklığı

-55°C~150°C TJ