BSC110N06NS3GATMA1

Specifications

Montaj

Surface Mount

ECCN Kodu

EAR99

RoHS Durumu

ROHS3 Compliant

Turn Off Delay Time

14 ns

Fall Time Typ

6 ns

Drive Voltage Max Rds On Min Rds On

10V

Kurşunsuz Kodu

no

Pulsed Drain Currentmax Idm

200A

Seri

OptiMOS™

Gate Charge Qg Max Vgs

33nC @ 10V

JESD-609 Kodu

e3

Turn On Delay Time

10 ns

Parça Durumu

Active

Case Connection

DRAIN

Fabrika Tedarik Süresi

26 Weeks

Terminal Formu

FLAT

Fet Type

N-Channel

Transistor Element Material

SILICON

Power Dissipation

2.5W

Rds On Max Id Vgs

11m Ω @ 50A, 10V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Terminal Pozisyonu

DUAL

Kurşunsuz

Contains Lead

Terminal Kaplaması

Tin (Sn)

Gate To Source Voltage Vgs

12V

Configuration

SINGLE WITH BUILT-IN DIODE

Max Dual Supply Voltage

60V

Avalanche Energy Rating Eas

22 mJ

Vgsth Max Id

4V @ 23μA

Pin Sayısı

8

Number Of Elements

1

Input Capacitance Ciss Max Vds

2700pF @ 30V

Kılıf / Paket

8-PowerTDFN

Çalışma Sıcaklığı

-55°C~150°C TJ

Yayın Yılı

2011

Operating Mode

ENHANCEMENT MODE

Qualification Status

Not Qualified

Power Dissipation Max

2.5W Ta 50W Tc

Current Continuous Drain Id25

50A Tc

Terminal Sayısı

5