BSC105N10LSFGATMA1

Specifications

Max Dual Supply Voltage

100V

Configuration

SINGLE WITH BUILT-IN DIODE

Gate To Source Voltage Vgs

20V

Avalanche Energy Rating Eas

377 mJ

Vgsth Max Id

2.4V @ 110μA

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Kurşunsuz

Contains Lead

Terminal Pozisyonu

DUAL

Power Dissipation

156W

Rds On Max Id Vgs

10.5m Ω @ 50A, 10V

Terminal Formu

FLAT

Transistor Element Material

SILICON

Fet Type

N-Channel

Case Connection

DRAIN

Parça Durumu

Not For New Designs

Fabrika Tedarik Süresi

16 Weeks

Gate Charge Qg Max Vgs

53nC @ 10V

JESD-609 Kodu

e3

Additional Feature

LOGIC LEVEL COMPATIBLE

Kurşunsuz Kodu

no

Seri

OptiMOS™

Pulsed Drain Currentmax Idm

360A

ECCN Kodu

EAR99

RoHS Durumu

ROHS3 Compliant

Montaj

Surface Mount

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Ambalaj

Tape & Reel (TR)

Transistor Application

SWITCHING

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Pin Sayısı

8

REACH Uyumluluk Kodu

not_compliant

Continuous Drain Current Id

11.4A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Jesd30 Code

R-PDSO-F5

Rise Time

26ns

Montaj Tipi

Surface Mount

Halogen Free

Halogen Free

Vgs Max

±20V

Terminal Sayısı

5

Current Continuous Drain Id25

11.4A Ta 90A Tc