BSC100N10NSFGATMA1

Specifications

Kurşunsuz Kodu

no

Pulsed Drain Currentmax Idm

360A

Seri

OptiMOS™

RoHS Durumu

ROHS3 Compliant

ECCN Kodu

EAR99

Montaj

Surface Mount

Turn Off Delay Time

26 ns

Drive Voltage Max Rds On Min Rds On

10V

Fall Time Typ

7 ns

Parça Durumu

Active

Case Connection

DRAIN

Fabrika Tedarik Süresi

26 Weeks

Gate Charge Qg Max Vgs

44nC @ 10V

JESD-609 Kodu

e3

Turn On Delay Time

18 ns

Power Dissipation

156W

Rds On Max Id Vgs

10m Ω @ 25A, 10V

Terminal Formu

FLAT

Transistor Element Material

SILICON

Fet Type

N-Channel

Gate To Source Voltage Vgs

20V

Max Dual Supply Voltage

100V

Configuration

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating Eas

377 mJ

Vgsth Max Id

4V @ 110μA

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Terminal Pozisyonu

DUAL

Kurşunsuz

Contains Lead

Terminal Kaplaması

Tin (Sn)

Yayın Yılı

1999

Operating Mode

ENHANCEMENT MODE

Pin Sayısı

8

Number Of Elements

1

Input Capacitance Ciss Max Vds

2900pF @ 50V

Reach Svhc

No SVHC

Kılıf / Paket

8-PowerTDFN

Çalışma Sıcaklığı

-55°C~150°C TJ

Terminal Sayısı

5

Vgs Max

±20V

Power Dissipation Max

156W Tc