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BSC100N06LS3GATMA1

Infineon Technologies

BSC100N06LS3GATMA1

Single MOSFETs Transistors

In StockRoHS: Compliant

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Verified sourcing

RoHS

Compliant

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Specifications

Avalanche Energy Rating Eas
22 mJ
Vgsth Max Id
2.2V @ 23μA
Configuration
SINGLE WITH BUILT-IN DIODE
Max Dual Supply Voltage
60V
Gate To Source Voltage Vgs
20V
Kurşunsuz
Contains Lead
Terminal Kaplaması
Tin (Sn)
Terminal Pozisyonu
DUAL
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Rds On Max Id Vgs
10m Ω @ 50A, 10V
Power Dissipation
2.5W
Fet Type
N-Channel
Transistor Element Material
SILICON
Terminal Formu
FLAT
Fabrika Tedarik Süresi
13 Weeks
Case Connection
DRAIN
Parça Durumu
Active
Turn On Delay Time
8 ns
Gate Charge Qg Max Vgs
45nC @ 10V
JESD-609 Kodu
e3
Seri
OptiMOS™
Pulsed Drain Currentmax Idm
200A
Kurşunsuz Kodu
no
Drive Voltage Max Rds On Min Rds On
4.5V 10V
Turn Off Delay Time
19 ns
Montaj
Surface Mount
RoHS Durumu
ROHS3 Compliant
ECCN Kodu
EAR99
Ambalaj
Tape & Reel (TR)
Pin Sayısı
8
Transistor Application
SWITCHING
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Jesd30 Code
R-PDSO-F5
Continuous Drain Current Id
12A
Nem Hassasiyeti (MSL)
1 (Unlimited)
REACH Uyumluluk Kodu
not_compliant
Halogen Free
Halogen Free
Montaj Tipi
Surface Mount
Rise Time
58ns
Vgs Max
±20V

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