BSC100N03MSGATMA1

Specifications

Seri

OptiMOS™

Yayın Yılı

2008

Operating Mode

ENHANCEMENT MODE

Kurşunsuz Kodu

no

Kılıf / Paket

8-PowerTDFN

Çalışma Sıcaklığı

-55°C~150°C TJ

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Pin Sayısı

8

Input Capacitance Ciss Max Vds

1700pF @ 15V

Number Of Elements

1

Montaj

Surface Mount

RoHS Durumu

ROHS3 Compliant

ECCN Kodu

EAR99

Terminal Sayısı

8

Fabrika Tedarik Süresi

39 Weeks

Vgs Max

±20V

Parça Durumu

Active

Case Connection

DRAIN

Qualification Status

Not Qualified

Power Dissipation Max

2.5W Ta 30W Tc

Additional Feature

AVALANCHE RATED

Contact Plating

Tin

Current Continuous Drain Id25

12A Ta 44A Tc

Gate Charge Qg Max Vgs

23nC @ 10V

Drain Currentmax Abs Id

44A

Rds On Max Id Vgs

10m Ω @ 30A, 10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Continuous Drain Current Id

12A

Power Dissipation

30W

Fet Type

N-Channel

Transistor Element Material

SILICON

Terminal Formu

FLAT

Rise Time

4.8ns

Halogen Free

Halogen Free

Montaj Tipi

Surface Mount

Ambalaj

Tape & Reel (TR)

Vgsth Max Id

2V @ 250μA

Gate To Source Voltage Vgs

16V

Configuration

SINGLE WITH BUILT-IN DIODE

Max Dual Supply Voltage

30V