BSC098N10NS5ATMA1

Specifications

Case Connection

DRAIN

Parça Durumu

Active

Fabrika Tedarik Süresi

26 Weeks

JESD-609 Kodu

e3

Gate Charge Qg Max Vgs

28nC @ 10V

Turn On Delay Time

10 ns

Seri

OptiMOS™

Pulsed Drain Currentmax Idm

240A

Montaj

Surface Mount

RoHS Durumu

ROHS3 Compliant

ECCN Kodu

EAR99

Number Of Channels

1

Drive Voltage Max Rds On Min Rds On

6V 10V

Turn Off Delay Time

17 ns

Configuration

SINGLE WITH BUILT-IN DIODE

Max Dual Supply Voltage

100V

Gate To Source Voltage Vgs

20V

Vgsth Max Id

3.8V @ 36μA

Avalanche Energy Rating Eas

30 mJ

Drain To Source Breakdown Voltage

100V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Kurşunsuz

Contains Lead

Terminal Kaplaması

Tin (Sn)

Terminal Pozisyonu

DUAL

Power Dissipation

69W

Rds On Max Id Vgs

9.8m Ω @ 30A, 10V

Terminal Formu

FLAT

Max Junction Temperature Tj

150°C

Fet Type

N-Channel

Transistor Element Material

SILICON

Vgs Max

±20V

Terminal Sayısı

5

Current Continuous Drain Id25

60A Tc

Power Dissipation Max

2.5W Ta 69W Tc

Operating Mode

ENHANCEMENT MODE

Yayın Yılı

2013

Number Of Elements

1

Input Capacitance Ciss Max Vds

2100pF @ 50V

Çalışma Sıcaklığı

-55°C~150°C TJ

Kılıf / Paket

8-PowerTDFN