BSC094N06LS5ATMA1

Specifications

Gate Charge Qg Max Vgs

9.4nC @ 4.5V

JESD-609 Kodu

e3

Turn On Delay Time

4 ns

Current Continuous Drain Id25

47A Tc

Power Dissipation Max

36W Tc

Case Connection

DRAIN

Parça Durumu

Active

Vgs Max

±20V

Fabrika Tedarik Süresi

26 Weeks

Terminal Sayısı

5

Number Of Channels

1

RoHS Durumu

ROHS3 Compliant

ECCN Kodu

EAR99

Input Capacitance Ciss Max Vds

1300pF @ 30V

Number Of Elements

1

Çalışma Sıcaklığı

-55°C~150°C TJ

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Turn Off Delay Time

14 ns

Kılıf / Paket

8-PowerTDFN

Operating Mode

ENHANCEMENT MODE

Yayın Yılı

2013

Drainsource On Resistancemax

0.0094Ohm

Seri

OptiMOS™

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Transistor Application

SWITCHING

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Terminal Kaplaması

Tin (Sn)

Terminal Pozisyonu

DUAL

Yükseklik

1.1mm

Configuration

SINGLE WITH BUILT-IN DIODE

Gate To Source Voltage Vgs

20V

Vgsth Max Id

2.3V @ 14μA

Drain To Source Breakdown Voltage

60V

Ambalaj

Tape & Reel (TR)

Montaj Tipi

Surface Mount

Terminal Formu

FLAT

Max Junction Temperature Tj

150°C

Transistor Element Material

SILICON

Fet Type

N-Channel

Yüzey Montaj

YES