BSC093N04LSGATMA1

Specifications

Case Connection

DRAIN

Parça Durumu

Active

Fabrika Tedarik Süresi

39 Weeks

Gate Charge Qg Max Vgs

24nC @ 10V

Turn On Delay Time

3.6 ns

Additional Feature

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Kurşunsuz Kodu

no

Seri

OptiMOS™

Montaj

Surface Mount

ECCN Kodu

EAR99

RoHS Durumu

ROHS3 Compliant

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Fall Time Typ

2.8 ns

Turn Off Delay Time

16 ns

Configuration

SINGLE WITH BUILT-IN DIODE

Max Dual Supply Voltage

40V

Gate To Source Voltage Vgs

20V

Vgsth Max Id

2V @ 14μA

Kurşunsuz

Contains Lead

Terminal Pozisyonu

DUAL

Power Dissipation

35W

Rds On Max Id Vgs

9.3m Ω @ 40A, 10V

Radyasyon Dayanımı

No

Terminal Formu

FLAT

Fet Type

N-Channel

Transistor Element Material

SILICON

Vgs Max

±20V

Terminal Sayısı

5

Current Continuous Drain Id25

13A Ta 49A Tc

Contact Plating

Tin

Power Dissipation Max

2.5W Ta 35W Tc

Operating Mode

ENHANCEMENT MODE

Yayın Yılı

2011

Drainsource On Resistancemax

0.0093Ohm

Input Capacitance Ciss Max Vds

1900pF @ 20V

Number Of Elements

1

Pin Sayısı

8

Çalışma Sıcaklığı

-55°C~150°C TJ

Reach Svhc

No SVHC

Kılıf / Paket

8-PowerTDFN