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BSC090N03LSGATMA1

Infineon Technologies

BSC090N03LSGATMA1

Single MOSFETs Transistors

In StockRoHS: Compliant

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Verified sourcing

RoHS

Compliant

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Specifications

Operating Mode
ENHANCEMENT MODE
Kurşunsuz Kodu
no
Yayın Yılı
2013
Seri
OptiMOS™
Input Capacitance Ciss Max Vds
1500pF @ 15V
Number Of Elements
1
Montaj
Surface Mount
ECCN Kodu
EAR99
RoHS Durumu
ROHS3 Compliant
Pin Sayısı
8
Drive Voltage Max Rds On Min Rds On
4.5V 10V
Çalışma Sıcaklığı
-55°C~150°C TJ
Kılıf / Paket
8-PowerTDFN
Case Connection
DRAIN
Parça Durumu
Active
Vgs Max
±20V
Terminal Sayısı
5
Fabrika Tedarik Süresi
26 Weeks
Gate Charge Qg Max Vgs
18nC @ 10V
JESD-609 Kodu
e3
Current Continuous Drain Id25
13A Ta 48A Tc
Qualification Status
Not Qualified
Contact Plating
Tin
Additional Feature
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Power Dissipation Max
2.5W Ta 32W Tc
Power Dissipation
32W
REACH Uyumluluk Kodu
not_compliant
Rds On Max Id Vgs
9m Ω @ 30A, 10V
Jesd30 Code
R-PDSO-F5
Continuous Drain Current Id
13A
Nem Hassasiyeti (MSL)
1 (Unlimited)
Terminal Formu
FLAT
Montaj Tipi
Surface Mount
Halogen Free
Halogen Free
Rise Time
2.6ns
Fet Type
N-Channel
Transistor Element Material
SILICON
Configuration
SINGLE WITH BUILT-IN DIODE
Max Dual Supply Voltage
30V
Gate To Source Voltage Vgs
20V

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