BSC084P03NS3GATMA1

Specifications

JESD-609 Kodu

e3

Gate Charge Qg Max Vgs

58nC @ 10V

Turn On Delay Time

16 ns

Case Connection

DRAIN

Parça Durumu

Active

Fabrika Tedarik Süresi

13 Weeks

ECCN Kodu

EAR99

RoHS Durumu

ROHS3 Compliant

Montaj

Surface Mount

Drive Voltage Max Rds On Min Rds On

6V 10V

Fall Time Typ

8 ns

Turn Off Delay Time

33 ns

Kurşunsuz Kodu

no

Seri

OptiMOS™

Pulsed Drain Currentmax Idm

200A

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Kurşunsuz

Contains Lead

Terminal Kaplaması

Tin (Sn)

Terminal Pozisyonu

DUAL

Max Dual Supply Voltage

-30V

Configuration

SINGLE WITH BUILT-IN DIODE

Gate To Source Voltage Vgs

25V

Vgsth Max Id

3.1V @ 105μA

Terminal Formu

FLAT

Transistor Element Material

SILICON

Fet Type

P-Channel

Power Dissipation

2.5W

Rds On Max Id Vgs

8.4m Ω @ 50A, 10V

Current Continuous Drain Id25

14.9A Ta 78.6A Tc

Power Dissipation Max

2.5W Ta 69W Tc

Qualification Status

Not Qualified

Vgs Max

±25V

Terminal Sayısı

5

Input Capacitance Ciss Max Vds

4785pF @ 15V

Number Of Elements

1

Pin Sayısı

8

Çalışma Sıcaklığı

-55°C~150°C TJ

Kılıf / Paket

8-PowerTDFN

Operating Mode

ENHANCEMENT MODE

Yayın Yılı

2006