BSC082N10LSGATMA1

Specifications

Transistor Element Material

SILICON

Fet Type

N-Channel

Terminal Formu

FLAT

Rds On Max Id Vgs

8.2m Ω @ 100A, 10V

Power Dissipation

156W

Terminal Pozisyonu

DUAL

Kurşunsuz

Contains Lead

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Vgsth Max Id

2.4V @ 110μA

Avalanche Energy Rating Eas

377 mJ

Gate To Source Voltage Vgs

20V

Max Dual Supply Voltage

100V

Configuration

SINGLE WITH BUILT-IN DIODE

Drive Voltage Max Rds On Min Rds On

4.5V 10V

ECCN Kodu

EAR99

RoHS Durumu

ROHS3 Compliant

Montaj

Surface Mount

Pulsed Drain Currentmax Idm

400A

Seri

OptiMOS™

Kurşunsuz Kodu

no

Additional Feature

LOGIC LEVEL COMPATIBLE

JESD-609 Kodu

e3

Gate Charge Qg Max Vgs

104nC @ 10V

Fabrika Tedarik Süresi

16 Weeks

Parça Durumu

Not For New Designs

Case Connection

DRAIN

Rise Time

24ns

Montaj Tipi

Surface Mount

Halogen Free

Halogen Free

Nem Hassasiyeti (MSL)

1 (Unlimited)

Continuous Drain Current Id

100A

Jesd30 Code

R-PDSO-F5

REACH Uyumluluk Kodu

not_compliant

Pin Sayısı

8

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Transistor Application

SWITCHING

Ambalaj

Tape & Reel (TR)

Kılıf / Paket

8-PowerTDFN

Çalışma Sıcaklığı

-55°C~150°C TJ

Pin Sayısı

8