BSC080N03LSGATMA1

Specifications

Operating Mode

ENHANCEMENT MODE

Kurşunsuz Kodu

no

Yayın Yılı

2011

Seri

OptiMOS™

RoHS Durumu

ROHS3 Compliant

ECCN Kodu

EAR99

Input Capacitance Ciss Max Vds

1700pF @ 15V

Number Of Elements

1

Montaj

Surface Mount

Pin Sayısı

8

Çalışma Sıcaklığı

-55°C~150°C TJ

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Kılıf / Paket

8-PowerTDFN

Case Connection

DRAIN

Parça Durumu

Active

Vgs Max

±20V

Fabrika Tedarik Süresi

26 Weeks

Terminal Sayısı

5

Gate Charge Qg Max Vgs

21nC @ 10V

JESD-609 Kodu

e3

Current Continuous Drain Id25

14A Ta 53A Tc

Power Dissipation Max

2.5W Ta 35W Tc

Additional Feature

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Contact Plating

Tin

Qualification Status

Not Qualified

Power Dissipation

35W

REACH Uyumluluk Kodu

not_compliant

Nem Hassasiyeti (MSL)

1 (Unlimited)

Continuous Drain Current Id

14A

Rds On Max Id Vgs

8m Ω @ 30A, 10V

Jesd30 Code

R-PDSO-F5

Halogen Free

Halogen Free

Rise Time

2.8ns

Montaj Tipi

Surface Mount

Terminal Formu

FLAT

Transistor Element Material

SILICON

Fet Type

N-Channel

Max Dual Supply Voltage

30V

Configuration

SINGLE WITH BUILT-IN DIODE

Gate To Source Voltage Vgs

20V