BSC079N03SG

Specifications

Parça Durumu

Obsolete

Case Connection

DRAIN

JESD-609 Kodu

e3

Gate Charge Qg Max Vgs

17nC @ 5V

Drain Currentmax Abs Id

14.6A

Additional Feature

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Pulsed Drain Currentmax Idm

160A

Seri

OptiMOS™

ECCN Kodu

EAR99

RoHS Durumu

RoHS Compliant

Montaj

Surface Mount

Turn Off Delay Time

21 ns

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Fall Time Typ

3.4 ns

Gate To Source Voltage Vgs

20V

Configuration

SINGLE WITH BUILT-IN DIODE

Drain To Source Breakdown Voltage

30V

Vgsth Max Id

2V @ 30μA

Avalanche Energy Rating Eas

120 mJ

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Terminal Pozisyonu

DUAL

Terminal Kaplaması

MATTE TIN

Kurşunsuz

Lead Free

Power Dissipation

2.8W

Rds On Max Id Vgs

7.9m Ω @ 40A, 10V

Terminal Formu

FLAT

Transistor Element Material

SILICON

Fet Type

N-Channel

Terminal Sayısı

5

Vgs Max

±20V

Voltage Rated Dc

30V

Power Dissipation Max

2.8W Ta 60W Tc

Qualification Status

Not Qualified

Current Continuous Drain Id25

14.6A Ta 40A Tc

Yayın Yılı

2005

Operating Mode

ENHANCEMENT MODE

Drainsource On Resistancemax

0.0116Ohm

Pin Sayısı

8

Number Of Elements

1

Input Capacitance Ciss Max Vds

2230pF @ 15V