BSC079N03LSCGATMA1

Specifications

Power Dissipation Max

2.5W Ta 30W Tc

Additional Feature

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Current Continuous Drain Id25

14A Ta 50A Tc

Turn On Delay Time

3 ns

Gate Charge Qg Max Vgs

19nC @ 10V

Terminal Sayısı

5

Fabrika Tedarik Süresi

26 Weeks

Vgs Max

±20V

Parça Durumu

Active

Case Connection

DRAIN

Kılıf / Paket

8-PowerTDFN

Turn Off Delay Time

14 ns

Çalışma Sıcaklığı

-55°C~150°C TJ

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Input Capacitance Ciss Max Vds

1600pF @ 15V

Number Of Elements

1

Montaj

Surface Mount

ECCN Kodu

EAR99

RoHS Durumu

ROHS3 Compliant

Pulsed Drain Currentmax Idm

200A

Seri

OptiMOS™

Yayın Yılı

2004

Ds Breakdown Voltagemin

30V

Operating Mode

ENHANCEMENT MODE

Terminal Pozisyonu

DUAL

Kurşunsuz

Lead Free

Pin Sayısı

8

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Transistor Application

SWITCHING

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Ambalaj

Tape & Reel (TR)

Vgsth Max Id

2.2V @ 250μA

Gate To Source Voltage Vgs

20V

Drain To Source Voltage Vdss

30V

Configuration

SINGLE WITH BUILT-IN DIODE

Fet Type

N-Channel

Transistor Element Material

SILICON

Terminal Formu

FLAT

Rise Time

2.4ns

Montaj Tipi

Surface Mount