BSC072N08NS5ATMA1

Specifications

Pin Sayısı

8

Transistor Application

SWITCHING

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Ambalaj

Tape & Reel (TR)

Halogen Free

Halogen Free

Montaj Tipi

Surface Mount

Rise Time

7ns

Continuous Drain Current Id

74A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Jesd30 Code

R-PDSO-F5

REACH Uyumluluk Kodu

not_compliant

Current Continuous Drain Id25

74A Tc

Power Dissipation Max

2.5W Ta 69W Tc

Vgs Max

±20V

Terminal Sayısı

5

Çalışma Sıcaklığı

-55°C~150°C TJ

Kılıf / Paket

8-PowerTDFN

Number Of Elements

1

Input Capacitance Ciss Max Vds

2100pF @ 40V

Drainsource On Resistancemax

0.0072Ohm

Operating Mode

ENHANCEMENT MODE

Yayın Yılı

2013

Element Configuration

Single

Kurşunsuz

Contains Lead

Terminal Pozisyonu

DUAL

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Avalanche Energy Rating Eas

40 mJ

Vgsth Max Id

3.8V @ 36μA

Max Dual Supply Voltage

80V

Gate To Source Voltage Vgs

20V

Transistor Element Material

SILICON

Fet Type

N-Channel

Weight

506.605978mg

Terminal Formu

FLAT

Rds On Max Id Vgs

7.2m Ω @ 37A, 10V

Turn On Delay Time

10 ns

Gate Charge Qg Max Vgs

29nC @ 10V

Fabrika Tedarik Süresi

26 Weeks

Case Connection

DRAIN

Parça Durumu

Active