BSC070N10NS5ATMA1

Specifications

Ambalaj

Tape & Reel (TR)

Transistor Application

SWITCHING

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Pin Sayısı

8

Yükseklik

1.1mm

Nem Hassasiyeti (MSL)

1 (Unlimited)

Continuous Drain Current Id

14A

Jesd30 Code

R-PDSO-F5

Montaj Tipi

Surface Mount

Halogen Free

Halogen Free

Rise Time

5ns

Vgs Max

±20V

Terminal Sayısı

5

Current Continuous Drain Id25

80A Tc

Power Dissipation Max

2.5W Ta 83W Tc

Operating Mode

ENHANCEMENT MODE

Yayın Yılı

2011

Drainsource On Resistancemax

0.007Ohm

Input Capacitance Ciss Max Vds

2700pF @ 50V

Number Of Elements

1

Çalışma Sıcaklığı

-55°C~150°C TJ

Kılıf / Paket

8-PowerTDFN

Max Dual Supply Voltage

100V

Gate To Source Voltage Vgs

20V

Vgsth Max Id

3.8V @ 50μA

Avalanche Energy Rating Eas

55 mJ

Drain To Source Breakdown Voltage

100V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Element Configuration

Single

Kurşunsuz

Contains Lead

Terminal Pozisyonu

DUAL

Power Dissipation

2.5W

Rds On Max Id Vgs

7m Ω @ 40A, 10V

Max Junction Temperature Tj

150°C

Terminal Formu

FLAT

Transistor Element Material

SILICON

Fet Type

N-Channel

Weight

506.605978mg

Case Connection

DRAIN

Parça Durumu

Active