BSC067N06LS3GATMA1

Specifications

Power Dissipation

2.5W

Rds On Max Id Vgs

6.7m Ω @ 50A, 10V

Terminal Formu

FLAT

Transistor Element Material

SILICON

Fet Type

N-Channel

Gate To Source Voltage Vgs

20V

Max Dual Supply Voltage

60V

Configuration

SINGLE WITH BUILT-IN DIODE

Vgsth Max Id

2.2V @ 35μA

Avalanche Energy Rating Eas

47 mJ

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Terminal Pozisyonu

DUAL

Terminal Kaplaması

Tin (Sn)

Kurşunsuz

Contains Lead

Kurşunsuz Kodu

no

Pulsed Drain Currentmax Idm

200A

Seri

OptiMOS™

ECCN Kodu

EAR99

RoHS Durumu

ROHS3 Compliant

Montaj

Surface Mount

Turn Off Delay Time

37 ns

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Fall Time Typ

7 ns

Parça Durumu

Active

Case Connection

DRAIN

Fabrika Tedarik Süresi

26 Weeks

JESD-609 Kodu

e3

Gate Charge Qg Max Vgs

67nC @ 10V

Turn On Delay Time

15 ns

REACH Uyumluluk Kodu

not_compliant

Nem Hassasiyeti (MSL)

1 (Unlimited)

Continuous Drain Current Id

15A

Jesd30 Code

R-PDSO-F5

Rise Time

26ns

Montaj Tipi

Surface Mount

Halogen Free

Halogen Free

Ambalaj

Tape & Reel (TR)

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Transistor Application

SWITCHING

Pin Sayısı

8