BSC066N06NSATMA1

Specifications

Transistor Element Material

SILICON

Fet Type

N-Channel

Montaj Tipi

Surface Mount

Halogen Free

Halogen Free

Rise Time

3ns

Terminal Formu

FLAT

Continuous Drain Current Id

64A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Jesd30 Code

R-PDSO-F5

Rds On Max Id Vgs

6.6m Ω @ 50A, 10V

REACH Uyumluluk Kodu

not_compliant

Terminal Pozisyonu

DUAL

Pin Sayısı

8

Terminal Kaplaması

Tin (Sn)

Kurşunsuz

Contains Lead

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Transistor Application

SWITCHING

Ambalaj

Tape & Reel (TR)

Vgsth Max Id

3.3V @ 20μA

Avalanche Energy Rating Eas

21 mJ

Gate To Source Voltage Vgs

20V

Max Dual Supply Voltage

60V

Configuration

SINGLE WITH BUILT-IN DIODE

Kılıf / Paket

8-PowerTDFN

Çalışma Sıcaklığı

-55°C~150°C TJ

Drive Voltage Max Rds On Min Rds On

6V 10V

RoHS Durumu

ROHS3 Compliant

ECCN Kodu

EAR99

Input Capacitance Ciss Max Vds

1500pF @ 30V

Number Of Elements

1

Montaj

Surface Mount

Pulsed Drain Currentmax Idm

256A

Drainsource On Resistancemax

0.0066Ohm

Seri

OptiMOS™

Yayın Yılı

2012

Operating Mode

ENHANCEMENT MODE

Power Dissipation Max

2.5W Ta 46W Tc

Current Continuous Drain Id25

64A Tc

Gate Charge Qg Max Vgs

21nC @ 10V