BSC065N06LS5ATMA1

Specifications

Configuration

SINGLE WITH BUILT-IN DIODE

Gate To Source Voltage Vgs

20V

Vgsth Max Id

2.3V @ 20μA

Drain To Source Breakdown Voltage

60V

Ambalaj

Tape & Reel (TR)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Transistor Application

SWITCHING

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Terminal Kaplaması

Tin (Sn)

Terminal Pozisyonu

DUAL

Yükseklik

1.1mm

Yüzey Montaj

YES

Power Dissipation

2.5W

REACH Uyumluluk Kodu

not_compliant

Continuous Drain Current Id

15A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Jesd30 Code

R-PDSO-F5

Rds On Max Id Vgs

6.5m Ω @ 32A, 10V

Montaj Tipi

Surface Mount

Max Junction Temperature Tj

150°C

Terminal Formu

FLAT

Transistor Element Material

SILICON

Fet Type

N-Channel

Case Connection

DRAIN

Parça Durumu

Active

Vgs Max

±20V

Fabrika Tedarik Süresi

26 Weeks

Terminal Sayısı

5

Gate Charge Qg Max Vgs

13nC @ 4.5V

JESD-609 Kodu

e3

Turn On Delay Time

5 ns

Current Continuous Drain Id25

64A Tc

Power Dissipation Max

46W Tc

Operating Mode

ENHANCEMENT MODE

Yayın Yılı

2013

Drainsource On Resistancemax

0.0065Ohm

Seri

OptiMOS™

Pulsed Drain Currentmax Idm

256A

Number Of Channels

1

RoHS Durumu

ROHS3 Compliant