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BSC059N04LSGATMA1

Infineon Technologies

BSC059N04LSGATMA1

Single MOSFETs Transistors

In StockRoHS: Compliant

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RoHS

Compliant

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Specifications

Gate To Source Voltage Vgs
20V
Configuration
SINGLE WITH BUILT-IN DIODE
Max Dual Supply Voltage
40V
Avalanche Energy Rating Eas
25 mJ
Vgsth Max Id
2V @ 23μA
Terminal Pozisyonu
DUAL
Kurşunsuz
Contains Lead
Power Dissipation
50W
Rds On Max Id Vgs
5.9m Ω @ 50A, 10V
Radyasyon Dayanımı
No
Terminal Formu
FLAT
Fet Type
N-Channel
Transistor Element Material
SILICON
Parça Durumu
Active
Case Connection
DRAIN
Fabrika Tedarik Süresi
26 Weeks
Gate Charge Qg Max Vgs
40nC @ 10V
Drain Currentmax Abs Id
16A
Additional Feature
LOGIC LEVEL COMPATIBLE
Turn On Delay Time
5.6 ns
Kurşunsuz Kodu
no
Pulsed Drain Currentmax Idm
292A
Seri
OptiMOS™
Montaj
Surface Mount
RoHS Durumu
ROHS3 Compliant
ECCN Kodu
EAR99
Turn Off Delay Time
23 ns
Drive Voltage Max Rds On Min Rds On
4.5V 10V
Fall Time Typ
3.8 ns
Ambalaj
Tape & Reel (TR)
Transistor Application
SWITCHING
Pin Sayısı
8
Jesd30 Code
R-PDSO-F5
Nem Hassasiyeti (MSL)
1 (Unlimited)
Continuous Drain Current Id
73A
Montaj Tipi
Surface Mount
Halogen Free
Halogen Free
Rise Time
3.4ns
Terminal Sayısı
5
Vgs Max
±20V

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