BSC057N08NS3GATMA1

Specifications

JESD-609 Kodu

e3

Gate Charge Qg Max Vgs

56nC @ 10V

Fabrika Tedarik Süresi

26 Weeks

Parça Durumu

Active

Case Connection

DRAIN

Drive Voltage Max Rds On Min Rds On

6V 10V

ECCN Kodu

EAR99

RoHS Durumu

ROHS3 Compliant

Montaj

Surface Mount

Pulsed Drain Currentmax Idm

400A

Seri

OptiMOS™

Kurşunsuz Kodu

no

Terminal Pozisyonu

DUAL

Kurşunsuz

Contains Lead

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Vgsth Max Id

3.5V @ 73μA

Gate To Source Voltage Vgs

20V

Max Dual Supply Voltage

80V

Configuration

SINGLE WITH BUILT-IN DIODE

Transistor Element Material

SILICON

Fet Type

N-Channel

Terminal Formu

FLAT

Rds On Max Id Vgs

5.7m Ω @ 50A, 10V

Power Dissipation

2.5W

Contact Plating

Tin

Power Dissipation Max

2.5W Ta 114W Tc

Qualification Status

Not Qualified

Current Continuous Drain Id25

16A Ta 100A Tc

Terminal Sayısı

5

Vgs Max

±20V

Kılıf / Paket

8-PowerTDFN

Çalışma Sıcaklığı

-55°C~150°C TJ

Pin Sayısı

8

Input Capacitance Ciss Max Vds

3900pF @ 40V

Number Of Elements

1

Drainsource On Resistancemax

0.0057Ohm

Yayın Yılı

2011

Operating Mode

ENHANCEMENT MODE

Pin Sayısı

8

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED