BSC054N04NSGATMA1

Specifications

Transistor Application

SWITCHING

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Pin Sayısı

8

Ambalaj

Tape & Reel (TR)

Rise Time

2.6ns

Montaj Tipi

Surface Mount

Halogen Free

Halogen Free

REACH Uyumluluk Kodu

not_compliant

Continuous Drain Current Id

17A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Jesd30 Code

R-PDSO-F5

Current Continuous Drain Id25

17A Ta 81A Tc

Power Dissipation Max

2.5W Ta 57W Tc

Contact Plating

Tin

Qualification Status

Not Qualified

Vgs Max

±20V

Terminal Sayısı

5

Input Capacitance Ciss Max Vds

2800pF @ 20V

Number Of Elements

1

Pin Sayısı

8

Çalışma Sıcaklığı

-55°C~150°C TJ

Kılıf / Paket

8-PowerTDFN

Operating Mode

ENHANCEMENT MODE

Yayın Yılı

2013

Drainsource On Resistancemax

0.0054Ohm

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Kurşunsuz

Contains Lead

Terminal Pozisyonu

DUAL

Max Dual Supply Voltage

40V

Configuration

SINGLE WITH BUILT-IN DIODE

Gate To Source Voltage Vgs

20V

Vgsth Max Id

4V @ 27μA

Avalanche Energy Rating Eas

35 mJ

Terminal Formu

FLAT

Transistor Element Material

SILICON

Fet Type

N-Channel

Power Dissipation

57W

Rds On Max Id Vgs

5.4m Ω @ 50A, 10V

Gate Charge Qg Max Vgs

34nC @ 10V

JESD-609 Kodu

e3