BSC052N08NS5ATMA1

Specifications

Drive Voltage Max Rds On Min Rds On

6V 10V

Fall Time Typ

5 ns

Turn Off Delay Time

19 ns

Number Of Channels

1

RoHS Durumu

ROHS3 Compliant

Montaj

Surface Mount

Seri

OptiMOS™

Kurşunsuz Kodu

yes

Turn On Delay Time

12 ns

Gate Charge Qg Max Vgs

40nC @ 10V

Fabrika Tedarik Süresi

26 Weeks

Case Connection

DRAIN

Parça Durumu

Active

Transistor Element Material

SILICON

Fet Type

N-Channel

Weight

506.605978mg

Max Junction Temperature Tj

150°C

Terminal Formu

FLAT

Rds On Max Id Vgs

5.2m Ω @ 47.5A, 10V

Power Dissipation

2.5W

Element Configuration

Single

Kurşunsuz

Contains Lead

Terminal Pozisyonu

DUAL

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Vgsth Max Id

3.8V @ 49μA

Avalanche Energy Rating Eas

70 mJ

Drain To Source Breakdown Voltage

80V

Max Dual Supply Voltage

80V

Gate To Source Voltage Vgs

20V

Çalışma Sıcaklığı

-55°C~150°C TJ

Kılıf / Paket

8-PowerTDFN

Input Capacitance Ciss Max Vds

2900pF @ 40V

Number Of Elements

1

Drainsource On Resistancemax

0.0052Ohm

Operating Mode

ENHANCEMENT MODE

Yayın Yılı

2013

Current Continuous Drain Id25

95A Tc

Power Dissipation Max

2.5W Ta 83W Tc

Vgs Max

±20V

Terminal Sayısı

5