BSC050N03MSGATMA1

Specifications

Seri

OptiMOS™

Pulsed Drain Currentmax Idm

320A

Kurşunsuz Kodu

no

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Montaj

Surface Mount

ECCN Kodu

EAR99

RoHS Durumu

ROHS3 Compliant

Fabrika Tedarik Süresi

16 Weeks

Case Connection

DRAIN

Parça Durumu

Obsolete

Additional Feature

AVALANCHE RATED

JESD-609 Kodu

e3

Gate Charge Qg Max Vgs

46nC @ 10V

Rds On Max Id Vgs

5m Ω @ 30A, 10V

Power Dissipation

50W

Fet Type

N-Channel

Transistor Element Material

SILICON

Terminal Formu

FLAT

Avalanche Energy Rating Eas

35 mJ

Vgsth Max Id

2V @ 250μA

Configuration

SINGLE WITH BUILT-IN DIODE

Gate To Source Voltage Vgs

16V

Terminal Pozisyonu

DUAL

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Drainsource On Resistancemax

0.0063Ohm

Ds Breakdown Voltagemin

30V

Operating Mode

ENHANCEMENT MODE

Yayın Yılı

2013

Çalışma Sıcaklığı

-55°C~150°C TJ

Kılıf / Paket

8-PowerTDFN

Number Of Elements

1

Input Capacitance Ciss Max Vds

3600pF @ 15V

Pin Sayısı

8

Vgs Max

±20V

Terminal Sayısı

5

Current Continuous Drain Id25

16A Ta 80A Tc

Qualification Status

Not Qualified

Power Dissipation Max

2.5W Ta 50W Tc

Contact Plating

Tin

Jesd30 Code

R-PDSO-F5